Researchers at The University of Texas at Arlington and The University of Texas at Arlington Research Institute (UTARI) have demonstrated a new way to mechanically tune the stiffness of advanced ferroelectric materials, opening the door to more durable sensors, actuators, and memory devices. Supervised by Dr. Ye Cao, associate professor in the Department of Materials Science and Engineering and a UTARI researcher, the study shows that freestanding ferroelectric membranes can undergo nonvolatile domain switching, meaning their internal structure remains stable even after mechanical strain is removed. The findings were recently published in Physical Review Materials.
Using advanced phase-field simulations, Dr. Cao’s team studied thin membranes made of barium strontium titanate, a material widely used in electronic and electromechanical applications. The research identified that applying tensile or compressive strain can permanently reconfigure the material’s internal polarization domains, resulting in a large and controllable change in stiffness, or Young’s modulus. At specific temperatures and material compositions, the elastic tunability reached more than 50 percent, a level of control that is difficult to achieve using traditional electric-field methods. Importantly, this strain-based approach avoids performance degradation commonly associated with repeated electrical switching.
The work was carried out by Laveeza Ahmad, a Ph.D. student working under Dr. Cao, with collaboration from Joseph H. Ngai, professor in the Department of Physics at UTA. Together, the team’s results provide a new design framework for mechanically reconfigurable ferroelectric devices, particularly for flexible electronics and nonvolatile memory technologies. The study highlights UTA’s growing role in advancing fundamental materials research with strong potential for future engineering and defense-related applications.
The paper can accessed here: https://journals.aps.org/prmaterials/abstract/10.1103/597g-g87y





